DIODES DMT10H015LPS-13

DIODES · FETs & Power MOSFETs · MPN DMT10H015LPS-13

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Specifications

Gate Charge(Qg)33.3nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation46W
Reverse Transfer Capacitance (Crss@Vds)6.9pF
RDS(on)16mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.871nF

Technical details

100V 44A 3V 46W 16mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS

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