DIODES · FETs & Power MOSFETs · MPN DMT10H015LK3-13
No reviews yet — be the first to review DIODES DMT10H015LK3-13.
| Gate Charge(Qg) | 33.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 261pF |
| Current - Continuous Drain(Id) | 52.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 2.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.9pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.871nF |
N-Channel 100V 52.7A 2.9W Surface Mount TO-252