DIODES · FETs & Power MOSFETs · MPN DMT10H015LFG-13
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| Gate Charge(Qg) | 33.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10A;42A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 2W;35W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.9pF |
| RDS(on) | 13.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.871nF |
100V 3.5V 13.5mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS