DIODES · FETs & Power MOSFETs · MPN DMT10H014LSS-13
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| Gate Charge(Qg) | 33.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.871nF |
100V 8.9A 1.2W 15mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS