DIODES · FETs & Power MOSFETs · MPN DMT10H010SPS-13
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| Gate Charge(Qg) | 56.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10.7A;113A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 139W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 8.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.468nF |
N-Channel 100V 10.7A 113A 139W Surface Mount PowerDI5060-8