DIODES · FETs & Power MOSFETs · MPN DMT10H010LSSQ-13
No reviews yet — be the first to review DIODES DMT10H010LSSQ-13.
| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 58.4nC@10V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 2.7W |
| RDS(on) | 14.5mΩ@4.5V |
| Input Capacitance(Ciss) | 4.166nF |
| Type | N-Channel |
100V 12A 2.8V 2.7W 14.5mΩ@4.5V N-Channel SO-8 Single FETs, MOSFETs RoHS