DIODES DMT10H010LPS-13

DIODES · FETs & Power MOSFETs · MPN DMT10H010LPS-13

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Specifications

Gate Charge(Qg)58.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)764pF
Current - Continuous Drain(Id)98A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)44pF
RDS(on)6.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.166nF
TypeN-Channel

Technical details

N-Channel 100V 98A 139W Surface Mount PowerDI-5060-8

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