DIODES · FETs & Power MOSFETs · MPN DMT10H010LK3-13
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| Gate Charge(Qg) | 53.7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 68.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 8.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.592nF |
N-Channel 100V 68.8A 3W Surface Mount TO-252(DPAK)