DIODES DMT10H009SPS-13

DIODES · FETs & Power MOSFETs · MPN DMT10H009SPS-13

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Specifications

Gate Charge(Qg)30nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.085nF

Technical details

N-Channel 100V 80A 83W Surface Mount PowerDI5060-8

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