DIODES DMT10H009SK3-13

DIODES · FETs & Power MOSFETs · MPN DMT10H009SK3-13

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)546pF
Current - Continuous Drain(Id)91A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V;4V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)9.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.028nF

Technical details

N-Channel 100V 91A 3.2W Surface Mount TO-252(DPAK)

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