DIODES · FETs & Power MOSFETs · MPN DMT10H009SCG-13
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 14A;48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.3W |
| RDS(on) | 9.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.085nF |
100V 4V 1.3W 9.5mΩ@10V 1 N-channel VDFN3333-8 Single FETs, MOSFETs RoHS