DIODES · FETs & Power MOSFETs · MPN DMT10H009LH3
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| Gate Charge(Qg) | 20.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 84A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 96W |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.309nF |
100V 84A 2.5V 96W 9mΩ@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS