DIODES · FETs & Power MOSFETs · MPN DMT10H009LFG-7
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 13A;50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W;30W |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.361nF |
100V 2.5V 8.5mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS