DIODES · FETs & Power MOSFETs · MPN DMT10H009LCG-7
No reviews yet — be the first to review DIODES DMT10H009LCG-7.
| Gate Charge(Qg) | 20.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 47A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 13.7pF |
| RDS(on) | 8.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.309nF |
N-Channel 100V 47A 2.1W Surface Mount VDFN3333-8