DIODES · FETs & Power MOSFETs · MPN DMT10H003SPSW-13
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 85nC@10V |
| Current - Continuous Drain(Id) | 152A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.2W;139W |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.542nF |
100V 152A 4V 3mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS