DIODES DMP65H9D0HSS-13

DIODES · FETs & Power MOSFETs · MPN DMP65H9D0HSS-13

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.9W
Reverse Transfer Capacitance (Crss@Vds)6.5pF
RDS(on)9Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)740pF
Vgs±30V

Technical details

600V 300mA 3V 1.9W 9Ω@10V 1 P-Channel P-Channel SO-8 Single FETs, MOSFETs RoHS

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