DIODES DMP65H13D0HSS-13

DIODES · FETs & Power MOSFETs · MPN DMP65H13D0HSS-13

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)13.4nC@10V
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.9W
Reverse Transfer Capacitance (Crss@Vds)3.3pF
RDS(on)13Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)582pF

Technical details

600V 250mA 4V 1.9W 13Ω@10V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS

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