DIODES DMP65H11D0HSS-13

DIODES · FETs & Power MOSFETs · MPN DMP65H11D0HSS-13

No reviews yet — be the first to review DIODES DMP65H11D0HSS-13.

Specifications

Drain to Source Voltage600V
Gate Charge(Qg)13nC@10V
Current - Continuous Drain(Id)270mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.9W
Reverse Transfer Capacitance (Crss@Vds)3.5pF
RDS(on)11Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)670pF

Technical details

600V 270mA 4V 1.9W 11Ω@10V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs