DIODES DMP45H4D9HK3-13

DIODES · FETs & Power MOSFETs · MPN DMP45H4D9HK3-13

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Specifications

Gate Charge(Qg)13.7nC@10V
Drain to Source Voltage450V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)4.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)3.3pF
RDS(on)3.1Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)564pF
TypeP-Channel

Technical details

P-Channel 450V 4.7A 104W Surface Mount TO-252

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