DIODES DMP45H4D9HJ3

DIODES · FETs & Power MOSFETs · MPN DMP45H4D9HJ3

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Specifications

Gate Charge(Qg)13.7nC
Drain to Source Voltage450V
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)3.1pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)547pF

Technical details

450V 4.6A 104W 1 P-Channel TO-251-3 Single FETs, MOSFETs RoHS

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