DIODES DMP32D4S-13

DIODES · FETs & Power MOSFETs · MPN DMP32D4S-13

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Specifications

Gate Charge(Qg)600pC@4.5V;1.2nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)10.85pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V;2V
Pd - Power Dissipation540mW
Reverse Transfer Capacitance (Crss@Vds)8.88pF
RDS(on)2.4Ω@10V;4Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)51.16pF
TypeP-Channel

Technical details

P-Channel 30V 300mA 540mW Surface Mount SOT-23

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