DIODES DMP3010LPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMP3010LPSQ-13

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Specifications

Gate Charge(Qg)126.2nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation1.26W
Reverse Transfer Capacitance (Crss@Vds)774pF
RDS(on)7.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.234nF

Technical details

P-Channel 30V 36A 1.26W Surface Mount PowerDI5060-8

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