DIODES DMP2900UVQ-13

DIODES · FETs & Power MOSFETs · MPN DMP2900UVQ-13

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Specifications

Current - Continuous Drain(Id)850mA
RDS(on)1.5Ω@1.8V
Pd - Power Dissipation800mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)3.4pF
Input Capacitance(Ciss)49pF
Gate Charge(Qg)700pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)12pF

Technical details

850mA 1.5Ω@1.8V 800mW 1V SOT-563 FET, MOSFET Arrays RoHS

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