DIODES DMP2012SN-7

DIODES · FETs & Power MOSFETs · MPN DMP2012SN-7

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Specifications

Drain to Source Voltage20V
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
RDS(on)300mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)178.5pF

Technical details

20V 900mA 1.2V 500mW 300mΩ@4.5V 1 P-Channel SC-59 Single FETs, MOSFETs RoHS

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