DIODES DMP2010UFG-7

DIODES · FETs & Power MOSFETs · MPN DMP2010UFG-7

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Specifications

Gate Charge(Qg)103nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation900mW
RDS(on)9.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.35nF

Technical details

P-Channel 20V 900mW Surface Mount PowerDI3333-8

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