DIODES DMP2010UFG-13

DIODES · FETs & Power MOSFETs · MPN DMP2010UFG-13

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Specifications

Gate Charge(Qg)103nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)12.7A;42A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation900mW
RDS(on)9.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.35nF

Technical details

20V 1.2V 900mW 9.5mΩ@4.5V 1 P-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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