DIODES DMP2008USS-13

DIODES · FETs & Power MOSFETs · MPN DMP2008USS-13

No reviews yet — be the first to review DIODES DMP2008USS-13.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)159nC@10V
Current - Continuous Drain(Id)13A;38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)589pF
RDS(on)9mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)6.82nF

Technical details

20V 400mV 1.4W 9mΩ@4.5V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs