DIODES DMP2006UFGQ-13

DIODES · FETs & Power MOSFETs · MPN DMP2006UFGQ-13

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)200nC@10V
Current - Continuous Drain(Id)17.5A;40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.3W;41W
RDS(on)5.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)7.5nF

Technical details

20V 5.5mΩ@4.5V 1 P-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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