DIODES DMP10H4D2S-7

DIODES · FETs & Power MOSFETs · MPN DMP10H4D2S-7

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Specifications

Gate Charge(Qg)1.8nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)5.6pF
Current - Continuous Drain(Id)270mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation440mW
Reverse Transfer Capacitance (Crss@Vds)2.9pF
RDS(on)2.8Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)87pF
TypeP-Channel

Technical details

P-Channel 100V 0.27A 0.44W Surface Mount SOT-23

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