DIODES DMP10H400SEQ-13

DIODES · FETs & Power MOSFETs · MPN DMP10H400SEQ-13

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Specifications

Gate Charge(Qg)17.5nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)300mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.239nF

Technical details

P-Channel 100V 2W Surface Mount SOT-223

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