DIODES DMP10H400SE-13

DIODES · FETs & Power MOSFETs · MPN DMP10H400SE-13

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Specifications

Gate Charge(Qg)17.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)203mΩ@10V;241mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.239nF
TypeP-Channel

Technical details

P-Channel 100V 2.3A 2W Surface Mount SOT-223

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