DIODES DMP10H088SPS-13

DIODES · FETs & Power MOSFETs · MPN DMP10H088SPS-13

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Specifications

Gate Charge(Qg)27.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)89mΩ@6V
Number1 P-Channel
Input Capacitance(Ciss)1.808nF
TypeP-Channel

Technical details

100V 20A 4V 2.2W 89mΩ@6V 1 P-Channel P-Channel PowerDI5060-8 Single FETs, MOSFETs RoHS

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