DIODES DMP1011UCB9-7

DIODES · FETs & Power MOSFETs · MPN DMP1011UCB9-7

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Specifications

Gate Charge(Qg)8.1nC@4.5V
Drain to Source Voltage8V
Output Capacitance(Coss)595pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation890mW
Reverse Transfer Capacitance (Crss@Vds)269pF
RDS(on)8.2mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)817pF
TypeP-Channel

Technical details

P-Channel 8V 10A 890mW Surface Mount U-WLB1515-9

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