DIODES DMP1011LFVQ-7

DIODES · FETs & Power MOSFETs · MPN DMP1011LFVQ-7

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Specifications

Gate Charge(Qg)9.5nC@6V
Drain to Source Voltage12V
Current - Continuous Drain(Id)13A;19A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.05W
RDS(on)11.7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)913pF

Technical details

12V 1.2V 1.05W 11.7mΩ@4.5V 1 P-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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