DIODES DMP1007UCB9-7

DIODES · FETs & Power MOSFETs · MPN DMP1007UCB9-7

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Specifications

Gate Charge(Qg)8.2nC@4.5V
Drain to Source Voltage8V
Current - Continuous Drain(Id)13.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation1.53W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)5.7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)900pF

Technical details

P-Channel 8V 13.2A 1.53W Surface Mount UWLB1515-9

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