DIODES DMNH6012SPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMNH6012SPSQ-13

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Specifications

Gate Charge(Qg)35.2nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)112pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.926nF

Technical details

N-Channel 60V 50A 1.6W Surface Mount PowerDI5060-8

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