DIODES DMNH6012LK3-13

DIODES · FETs & Power MOSFETs · MPN DMNH6012LK3-13

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Specifications

Gate Charge(Qg)35.2nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)112pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.926nF

Technical details

60V 60A 3V 3.8W 12mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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