DIODES · FETs & Power MOSFETs · MPN DMNH6011LK3Q-13
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| Gate Charge(Qg) | 49.1nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.077nF |
55V 80A 2V 3W 12mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS