DIODES DMNH6011LK3Q-13

DIODES · FETs & Power MOSFETs · MPN DMNH6011LK3Q-13

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Specifications

Gate Charge(Qg)49.1nC@10V
Drain to Source Voltage55V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)127pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.077nF

Technical details

55V 80A 2V 3W 12mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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