DIODES · FETs & Power MOSFETs · MPN DMNH6008SPSQ-13
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 40.1nC@10V |
| Current - Continuous Drain(Id) | 16.5A;88A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 118pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.597nF |
60V 4V 3.3W 8mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS