DIODES DMNH4011SPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMNH4011SPSQ-13

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Specifications

Gate Charge(Qg)25.5nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)12.9A;100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W;150W
Reverse Transfer Capacitance (Crss@Vds)108pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.405nF

Technical details

40V 4V 10mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS

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