DIODES DMNH4011SK3Q-13

DIODES · FETs & Power MOSFETs · MPN DMNH4011SK3Q-13

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Specifications

Gate Charge(Qg)25.5nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)108pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.405nF

Technical details

N-Channel 40V 50A 50W Surface Mount TO-252

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