DIODES DMNH3010LK3-13

DIODES · FETs & Power MOSFETs · MPN DMNH3010LK3-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)37nC@10V
Current - Continuous Drain(Id)15A;55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)138pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.075nF

Technical details

30V 2.5V 3.2W 9.5mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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