DIODES DMNH10H028SPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMNH10H028SPSQ-13

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)173pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.9W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)19mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.245nF

Technical details

N-Channel 100V 40A 2.9W Surface Mount PowerDI-5060-8

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