DIODES DMNH10H028SK3-13

DIODES · FETs & Power MOSFETs · MPN DMNH10H028SK3-13

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)36nC@10V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation3.7W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.245nF
TypeN-Channel

Technical details

N-Channel 100V 55A 3.7W Surface Mount TO-252(DPAK)

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