DIODES DMN67D8LW-13

DIODES · FETs & Power MOSFETs · MPN DMN67D8LW-13

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Specifications

Gate Charge(Qg)821pC
Drain to Source Voltage60V
Current - Continuous Drain(Id)240mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation320mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)7.5Ω@5V
Number1 N-channel
Input Capacitance(Ciss)22pF

Technical details

N-Channel 60V 240mA 320mW Surface Mount SOT-323

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