DIODES DMN67D8LV-7

DIODES · FETs & Power MOSFETs · MPN DMN67D8LV-7

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Specifications

Gate Charge(Qg)821pC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)320mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation800mW
RDS(on)7.5Ω@5V
Reverse Transfer Capacitance (Crss@Vds)2.5pF
Number2 N-Channel
Input Capacitance(Ciss)22pF
TypeN-Channel

Technical details

N-Channel Array 60V 320mA 800mW Surface Mount SOT-563

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