DIODES DMN67D8LT-13

DIODES · FETs & Power MOSFETs · MPN DMN67D8LT-13

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Specifications

Gate Charge(Qg)821pC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)4.1pF
Current - Continuous Drain(Id)210mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation260mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)7.5Ω@5V
Number1 N-channel
Input Capacitance(Ciss)22pF
TypeN-Channel

Technical details

N-Channel 60V 210mA 260mW Surface Mount SOT-523

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