DIODES DMN67D8LDW-7

DIODES · FETs & Power MOSFETs · MPN DMN67D8LDW-7

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Specifications

Current - Continuous Drain(Id)230mA
RDS(on)7.5Ω@5V
Pd - Power Dissipation320mW
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)2.5pF
Number2 N-Channel
Input Capacitance(Ciss)22pF
Gate Charge(Qg)821pC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 230mA 320mW Surface Mount SOT-363

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