DIODES · FETs & Power MOSFETs · MPN DMN67D8LDW-13
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| Current - Continuous Drain(Id) | 230mA |
|---|---|
| RDS(on) | 7.5Ω@5V |
| Pd - Power Dissipation | 410mW |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 22pF |
| Gate Charge(Qg) | 821pC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 4.1pF |
230mA 7.5Ω@5V 410mW 2.5V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS