DIODES DMN66D0LDWQ-13

DIODES · FETs & Power MOSFETs · MPN DMN66D0LDWQ-13

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Specifications

Current - Continuous Drain(Id)217mA
Pd - Power Dissipation470mW
RDS(on)6Ω@5V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)900pC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

217mA 470mW 6Ω@5V 2V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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